Display panel, method of manufacturing the same and display device

A method of manufacturing a display panel, wherein the display panel comprises a display substrate, the display substrate comprises a base substrate, the base substrate has a display area and a peripheral area, and the method comprises:

• forming a photosensitive thin film transistor structure in the peripheral area, wherein the photosensitive thin film transistor structure comprises a reference thin film transistor unit and a photosensitive thin film transistor unit, the reference thin film transistor unit comprises a plurality of reference thin film transistors, and the photosensitive thin film transistor unit comprises a plurality of photosensitive thin film transistors;
• forming a light shielding layer on a side of the photosensitive thin film transistor structure close to a display side of the display panel, wherein an orthographic projection of the reference thin film transistor on the base substrate is located within an orthographic projection of the light shielding layer on the base substrate, at least part of an orthographic projection of a channel region of the photosensitive thin film transistor on the base substrate does not overlap the orthographic projection of the light shielding layer on the base substrate;
• connecting a first electrode of the reference thin film transistor and a first electrode of the photosensitive thin film transistor to a signal input terminal of the photosensitive thin film transistor structure;
• connecting a second electrode of the reference thin film transistor to a second signal line of the photosensitive thin film transistor structure, connecting a second electrode of the photosensitive thin film transistor to a third signal line of the photosensitive thin film transistor structure;
• connecting a gate electrode of the reference thin film transistor to a first control terminal of the photosensitive thin film transistor structure, connecting a gate electrode of the photosensitive thin film transistor to a second control terminal of the photosensitive thin film transistor structure;
• wherein the peripheral area comprises a first peripheral area and a second peripheral area, and the first peripheral area and the second peripheral area are respectively located on opposite sides of the display area, the photosensitive thin film transistor structure is located in the first peripheral area, the first peripheral area is provided with a third connection line, and the second peripheral area is provided with a first terminal,
• the gate electrode of the reference thin film transistor and the gate electrode of the photosensitive thin film transistor are both connected to the third connection line, the third connection line is connected to a third line in a different layer through a via hole, the third connection line is connected to a fifth connection line in a different layer through a via hole, the fifth connection line extends to the second peripheral area and is connected to the first terminal, and the first terminal is configured to input a control signal to the gate electrode of the reference thin film transistor and the gate electrode of the photosensitive thin film transistor.