Fabrication method for fused multi-layer amorphous selenium sensor
AssigneeThe Research Foundation for The State University of New York
InventorsJames Scheuermann, Wei Zhao
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Abstract
A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.
Claims18
A method of fabricating a sensor, comprising:
- forming a first charge blocking layer over a first substrate;
- forming a first layer of amorphous selenium over the first charge blocking layer;
- forming a second charge blocking layer over a second substrate;
- forming a second layer of amorphous selenium over the second charge blocking layer;
- contacting the first layer of amorphous selenium with the second layer of amorphous selenium to form a multi-layer structure;
- heating the multi-layer structure to fuse the first layer of amorphous selenium to the second layer of amorphous selenium.
A method of fabricating a sensor, comprising:
- forming a charge blocking layer over a substrate;
- forming a layer of amorphous selenium over the charge blocking layer;
- and
- heating the layer of amorphous selenium to fuse the layer of amorphous selenium to the charge blocking layer.
Dependencies are inferred from the claim text.