Silicon carbide integrated device and method for manufacturing an integrated device
AssigneeSTMicroelectronics S.r.l.
InventorLeonardo Fragapane
Life of this patent
Estimating the term…
Abstract
An integrated device includes: a semiconductor structural layer, including silicon carbide and having a first conductivity type; a power device integrated in the structural layer; and an edge termination structure, extending in a ring around the power device and having a second conductivity type. The edge termination structure includes a plurality of ring structures each arranged around the power device and in contiguous pairs. At least a first one of the ring structures comprises a transition region contiguous to a second one of the ring structures. The transition region includes connection regions, having the second conductivity type, connected to the second one of the ring structures and alternating with charge control regions having the first conductivity type.
Claims20
An integrated device, comprising:
- a semiconductor structural layer, including silicon carbide and having a first conductivity type;
- a power device integrated in the structural layer;
- and
- an edge termination structure, extending in a ring around the power device and having a second conductivity type;
- wherein the edge termination structure comprises a plurality of ring structures each around the power device and in contiguous pairs;
- wherein at least a first one of the ring structures comprises a transition region contiguous to a second one of the ring structures;
- and
- wherein the transition region includes connection regions, having the second conductivity type, coupled to the second one of the ring structures and alternated with charge control regions having the first conductivity type.
A method for manufacturing an integrated device, comprising:
- forming a power device in a semiconductor structural layer containing silicon carbide having a first conductivity type;
- forming an edge termination structure, extending in a ring around the power device and having a second conductivity type;
- wherein forming the edge termination structure comprises:
- forming a plurality of ring structures each arranged around the power device and in contiguous pairs;
- forming, in at least a first one of the ring structures, a transition region contiguous to a second one of the ring structures;
- and
- forming, in the transition region, connection regions, having the second conductivity type, coupled to the second one of the ring structures and alternated with charge control regions having the first conductivity type.
A device, comprising:
- a structural layer having a first surface opposite a second surface;
- a power device in the structural layer;
- and
- an edge termination structure in the structural layer and surrounding the power device, the edge termination structure including:
- a first ring structure extending a first depth from the first surface toward the second surface, the first ring structure having a first annular region and a first transition region;
- and
- a second ring structure between the first annular region of the first ring structure and the power device, the second ring structure extending a second depth that is greater than the first depth from the first surface toward the second surface, the second ring structure including a second transition region comprising a plurality of connection regions having a first conductivity type alternated with a plurality of charge control regions having a second conductivity type that is different from the first conductivity type.
Dependencies are inferred from the claim text.