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US 12,707,653 B2Granted
Thick redistribution layer features
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Feng Cheng, Kang-Yi Lien, Chia-Ping Lai
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Abstract
Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a metal feature in a dielectric layer, a passivation structure over the dielectric layer and the metal feature, a contact pad over the passivation structure, and a plurality of contact vias extending through the passivation structure and in contact with the metal feature and the contact pad.
Claims20
A semiconductor structure, comprising:
- a metal feature in a dielectric layer;
- a passivation structure over the dielectric layer and the metal feature;
- a contact pad over the passivation structure;
- and
- a plurality of contact vias extending through the passivation structure and in contact with the metal feature and the contact pad,
- wherein the metal feature comprises a first thickness,
- wherein the contact pad comprises a second thickness greater than the first thickness,
- wherein a ratio of the second thickness to the first thickness is between about 5 and about 10.
5 more elements
A semiconductor structure, comprising:
- a metal feature in a dielectric layer;
- a passivation structure over the dielectric layer and the metal feature;
- a contact pad over the passivation structure;
- more than one contact via extending through the passivation structure and in contact with the metal feature and the contact pad;
- a protective layer disposed along sidewalls of the contact pad;
- a top passivation layer disposed over the contact pad, the passivation structure, and the protective layer;
- a polymer layer disposed over the top passivation layer;
- and
- a conductive pillar extending through the polymer layer and the top passivation layer to contact the contact pad,
- wherein the top passivation layer and the protective layer comprise silicon nitride,
- wherein the top passivation layer has a first density,
- wherein the protective layer has a second density greater than the first density.
9 more elements
A semiconductor structure, comprising:
- a metal feature in a dielectric layer;
- a passivation structure over the dielectric layer and the metal feature;
- a contact pad over the passivation structure;
- a plurality of contact vias extending through the passivation structure to electrically connect the metal feature and the contact pad;
- a top passivation layer disposed over the contact pad and the passivation structure;
- a polymer layer disposed over the top passivation layer;
- and
- a conductive pillar extending through the polymer layer and the top passivation layer to contact the contact pad,
- wherein the metal feature comprises a first thickness along a vertical direction,
- wherein the contact pad comprises a second thickness along the vertical direction,
- wherein the conductive pillar comprise a third thickness along the vertical direction,
- wherein the third thickness is greater than the second thickness,
- wherein the second thickness is greater than the first thickness.
10 more elements
Dependencies are inferred from the claim text.