Hybrid memory device and electronic device including same

An electronic device comprising:

• a memory device;
• and
• a controller electrically connected to the memory device, and configured to control the memory device, wherein
• at least one of the memory device or the controller includes a hybrid memory device, the hybrid memory device comprising:
• a first transistor comprising a first channel region, a first gate electrode facing and spaced apart from the first channel region, and a non-volatile first memory layer between the first channel region and the first gate electrode;
• and
• a second transistor comprising a second channel region including a same material as the first channel region, a second gate electrode facing and spaced apart from the second channel region, and a volatile second memory layer between the second channel region and the second gate electrode,
• wherein the non-volatile first memory layer and the volatile second memory layer include different materials, and
• a gate insulating layer of the first transistor is isolated from a gate insulating layer of the second transistor.

A hybrid memory device comprising:

• a first transistor comprising a first channel region, a first gate electrode facing and spaced apart from the first channel region, and a non-volatile first memory layer between the first channel region and the first gate electrode;
• and
• a second transistor comprising a second channel region including a same material as the first channel region, a second gate electrode facing and spaced apart from the second channel region, and a volatile second memory layer between the second channel region and the second gate electrode,
• wherein the non-volatile first memory layer includes ferroelectric material and the volatile second memory layer includes a high-k material.