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US 12,706,363 B2Granted
High-frequency line connection structure
AssigneeNTT, Inc.
InventorHiromasa Tanobe
Life of this patent
Estimating the term…
Abstract
A high-frequency line connecting structure includes microstrip lines, and a connecting part which bends an extension direction of the line at a place where the microstrip lines are connected. Spaces from which the substrate is removed are formed on the inner peripheral side and the outer peripheral side of the connecting part. The total volume of the space on the inner peripheral side is smaller than the total volume of the space on the outer peripheral side.
Claims10
A structure comprising:
- a substrate comprising a multilayer structure including a first plurality of layers, the first plurality of layers being stacked perpendicular to a surface of the substrate, each of the first plurality of layers being made of an insulator or a semi-insulating semiconductor;
- a first high-frequency line disposed in the substrate, the first high-frequency line being disposed in a first layer of the first plurality of layers;
- a second high-frequency line disposed in the substrate, the second high-frequency line having an extension direction different from an extension direction of the first high-frequency line, the second high-frequency line extending through the first plurality of layers;
- and
- a connecting part connecting the first high-frequency line to the second high-frequency line and comprising a bend in an extension direction of the connecting part,
- wherein the substrate defines N first spaces on an outer peripheral side of the connecting part, and M second spaces on an inner peripheral side of the connecting part,
- wherein the N first spaces and the M second spaces are formed by removing a part of the substrate,
- wherein M and N are each an integer of 1 or more,
- wherein a relationship MEN is satisfied, and
- wherein the N first spaces and the M second spaces expose a ground plane or are disposed at a position adjacent to the ground plane, the ground plane being disposed in the substrate around at least one of the first high-frequency line or the second high-frequency line, and the ground plane is configured to function as a capacitive adjustment circuit.
7 more elements
A structure comprising:
- a substrate comprising a multilayer structure including a first plurality of layers, the first plurality of layers being stacked perpendicular to a surface of the substrate, each of the first plurality of layers being made of an insulator or a semi-insulating semiconductor;
- a first high-frequency line disposed in the substrate, the first high-frequency line being disposed in a first layer of the first plurality of layers;
- a second high-frequency line disposed in the substrate, the second high-frequency line having an extension direction different from an extension direction of the first high-frequency line, the second high-frequency line extending through the first plurality of layers;
- and
- a connecting part connecting the first high-frequency line to the second high-frequency line and comprising a bend in an extension direction of the connecting part,
- wherein the substrate defines N first spaces on an outer peripheral side of the connecting part, and M second spaces on an inner peripheral side of the connecting part,
- wherein the N first spaces and the M second spaces are formed by removing a part of the substrate,
- wherein M and N are each an integer of 1 or more,
- wherein a relationship MEN is satisfied, and
- wherein the N first spaces and the M second spaces expose at least one of the first high-frequency line or the second high-frequency line or are disposed at a position adjacent to at least one of the first high-frequency line or the second high-frequency line, and the N first spaces and the M second spaces are configured to provide an inductive adjustment.
7 more elements
A structure comprising:
- a substrate comprising a multilayer structure including a first plurality of layers, the first plurality of layers being stacked perpendicular to a surface of the substrate, each of the first plurality of layers being made of an insulator or a semi-insulating semiconductor;
- a first high-frequency line disposed in the substrate, the first high-frequency line being disposed in a first layer of the first plurality of layers;
- a second high-frequency line disposed in the substrate, the second high-frequency line having an extension direction different from an extension direction of the first high-frequency line, the second high-frequency line extending through the first plurality of layers;
- and
- a connecting part connecting the first high-frequency line to the second high-frequency line and comprising a bend in an extension direction of the connecting part,
- wherein the substrate defines N first spaces on an outer peripheral side of the connecting part, and M second spaces on an inner peripheral side of the connecting part,
- wherein the N first spaces and the M second spaces are formed by removing a part of the substrate,
- wherein M and N are each an integer of 1 or more;
- and
- a relationship MEN is satisfied.
7 more elements
Dependencies are inferred from the claim text.