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US 12,706,282 B2Granted
Substrate support and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorChishio Koshimizu
Life of this patent
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Abstract
A structure efficiently provides bias power to an object placed on a substrate support. A substrate support includes a dielectric portion and at least one electrode. The at least one electrode is located in the dielectric portion to provide bias power to an object placed on the dielectric portion.
Claims17
A plasma processing apparatus, comprising:
- a chamber;
- a substrate support disposed in the chamber, the substrate support including:
- a first electrostatic chuck portion configured to hold a substrate placed on the first electrostatic chuck portion;
- and
- a second electrostatic chuck portion surrounding the first electrostatic chuck portion, the second electrostatic chuck portion being configured to hold an edge ring placed on the second electrostatic chuck portion, the second electrostatic chuck portion including;
- a first edge chucking electrode,
- a second edge chucking electrode separated from the first edge chucking electrode on a same plane, and
- an edge bias electrode extending along a length of both the first edge chucking electrode and the second edge chucking electrode, wherein the first edge chucking electrode and the second edge chucking electrode are located above the edge bias electrode which is located in the second electrostatic chuck portion;
- and
- a voltage pulse generator electrically connected to the edge bias electrode and configured to generate a pulsed direct current (DC) voltage.
7 more elements
Dependencies are inferred from the claim text.