Apparatus and method for processing substrate using plasma

An apparatus for processing a substrate comprising:

• a first space disposed between an electrode connected to a high-frequency power supply and an ion blocker spaced apart from the electrode, in which plasma is generated based on a hydrogen gas;
• a second space disposed between the ion blocker and a shower head;
• a processing space disposed under the shower head and for processing a substrate;
• a first gas supply module for providing the hydrogen gas to the first space through the electrode;
• and
• a second gas supply module for providing a second gas comprising an ammonia gas,
• wherein the shower head includes a first shower region and a second shower region surrounding the first shower region, the shower head comprises supply holes configured to directly supply the second gas, supplied to the shower head by the second gas supply module, toward the processing space disposed under the shower head, wherein the supply holes are formed only on a lower surface facing the processing space positioned under the shower head and the supply holes formed only on the lower surface of the shower head are located only at the second shower region of the shower head surrounding the first shower region where the supply holes formed only on the lower surface of the shower head are not formed,
• wherein the apparatus further comprises the ion blocker having a first filter region and a second filter region surrounding the first filter region, the ion blocker comprises other supply holes configured to supply the second gas, and the other supply holes of the ion blocker are located only at the first filter region which corresponds to the first shower region of the shower head where the supply holes of the shower head are not formed and is surrounded by the second filter region of the ion blocker, wherein the second filter region of the ion blocker corresponds to the second shower region of the shower head where the supply holes of the shower head are formed, and where the other supply holes of the ion block are not formed,
• wherein a substrate including a photoresist pattern including carbon is located in the processing space, and wherein ammonia not excited in the processing space and hydrogen radicals formed by the plasma perform isotropic etching on the photoresist pattern to reduce edge roughness of the photoresist pattern.