Semiconductor device with advanced pad structure and method for forming same

A method of manufacturing a capacitor, comprising:

• forming a trench in a substrate;
• depositing a stack of alternating metal layers and dielectric layers in the trench;
• depositing a dielectric layer over the stack;
• forming conductive vias extending through the dielectric layer and contacting the metal layers;
• forming one or more metallization layers over the dielectric layer, wherein the conductive vias remain electrically isolated from each other through the metallization layers;
• forming a first passivation layer over the metallization layers;
• forming contact pads with lower portions embedded in the passivation layer, wherein each of the contact pads electrically connects two or more of the conductive vias;
• and
• forming a second passivation layer over the first passivation layer, wherein upper portions of the contact pads are surrounded by the second passivation layer.

A method, comprising:

• etching a substrate to form at least first and second trenches;
• depositing a stack of metal layers and dielectric layers alternatively arranged in the first and second trenches;
• patterning the stack to form a deep trench capacitor (DTC) that includes a plurality of first electrodes of a first polarity and a plurality of second electrodes of a second polarity;
• forming an interconnect structure over the substrate, wherein the interconnect structure includes conductive paths electrically connecting to the first and second electrodes, wherein the conductive paths are isolated from each other inside the interconnect structure;
• forming first and second contact pads over the interconnect structure, wherein the first contact pad electrically connects a first portion of the conductive paths associated with the first electrodes, and the second contact pad electrically connects a second portion of the conductive paths associated with the second electrodes, wherein in a cross-sectional view the second contact pad extends in a way such that the second trench is fully under the second contact pad, and at least a center portion of the first trench is positioned directly under a gap between the first and second contact pads;
• and
• depositing first and second passivation layers over the interconnect structure, wherein each of the first and second contact pads includes a plurality of lower portions surrounded by the first passivation layer and an upper portion surrounded by the second passivation layer and contacting each of the lower portions.