Faster method to prevent hybrid single level cell defects in system
AssigneeSanDisk Technologies LLC
InventorsParth Amin, Anubhav Khandelwal, Mahim Gupta, Piyush A. Dhotre
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AssigneeSanDisk Technologies LLC
InventorsParth Amin, Anubhav Khandelwal, Mahim Gupta, Piyush A. Dhotre
Estimating the term…
A memory apparatus includes memory cells configured to retain a threshold voltage corresponding to data states. The memory cells are grouped into blocks and operable as one of single-level cells storing one bit of data per each of the memory cells or multi-level cells storing a plurality of bits of the data per each of the memory cells. A control means is configured to determine whether the memory cells of one of the blocks were previously used as the multi-level cells. The control means is also configured to determine the memory cells of the one of the blocks should be used as the multi-level cells only in response to determining the memory cells of one of the blocks were previously used as the multi-level cells and an occurrence of at least one failure to decode the data of the memory cells of the one of the blocks.
A memory apparatus, comprising:
A controller in communication with a memory apparatus including memory cells configured to retain a threshold voltage corresponding to one of a plurality of data states, the memory cells grouped into blocks and operable as one of single-level cells storing one bit of data per each of the memory cells or multi-level cells storing a plurality of bits of the data per each of the memory cells, the controller configured to:
A method of operating a memory apparatus including memory cells configured to retain a threshold voltage corresponding to one of a plurality of data states, the memory cells grouped into blocks and operable as one of single-level cells storing one bit of data per each of the memory cells or multi-level cells storing a plurality of bits of the data per each of the memory cells, the method comprising the steps of:
Dependencies are inferred from the claim text.