Memory device including damage detection circuit and test system including the memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsEunji Kim, Wandong Kim, Byongmo Moon, Kwangjin Lee
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AssigneeSamsung Electronics Co., Ltd.
InventorsEunji Kim, Wandong Kim, Byongmo Moon, Kwangjin Lee
Estimating the term…
A memory device includes a memory cell array region including a plurality of memory cells, a first test pattern form disposed below a bonding pad and configured to output a first test output signal, a second test pattern form disposed below a non-bonding pad and configured to output a second test output signal, and a damage detection circuit. The damage detection circuit is configured to output a test result signal indicating whether a lower region of the bonding pad has been damaged. The test result signal is based on the number of times a logic level of the first test output signal transitions and the number of times a logic level of the second test output signal transitions.
A memory device comprising:
A memory device comprising:
A test system comprising:
Dependencies are inferred from the claim text.