Optical interposer structure and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Wei Tseng, Hsing-Kuo Hsia, Stefan Rusu, Chen-Hua Yu, Chewn-Pu Jou
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Abstract
A semiconductor structure includes an optical interposer having at least one first photonic device in a first dielectric layer and at least one second photonic device in a second dielectric layer, wherein the second dielectric layer is disposed above the first dielectric layer. The semiconductor structure further includes a first die disposed on the optical interposer and electrically connected to the optical interposer; a first substrate under the optical interposer; and conductive connectors under the first substrate.
Claims20
A semiconductor structure, comprising:
- an optical interposer including at least one first photonic device in a first dielectric layer and at least one second photonic device in a second dielectric layer, wherein the second dielectric layer is disposed above the first dielectric layer, and wherein the first and second dielectric layers form a contiguous interface that laterally spans regions of the optical interposer that include the at least one first photonic device and the at least one second photonic device disposed respectively below and above the contiguous interface;
- a first die disposed on the optical interposer and electrically connected to the optical interposer;
- a first substrate under the optical interposer;
- and
- conductive connectors under the first substrate.
A semiconductor structure, comprising:
- an optical interposer including a first dielectric layer and a second dielectric layer on the first dielectric layer, first photonic devices in the first dielectric layer, second photonic devices in the second dielectric layer, and a redistribution layer on the second dielectric layer, wherein the second dielectric layer is between the first dielectric layer and the redistribution layer, and wherein the first and second dielectric layers form a contiguous interface that laterally spans regions of the optical interposer that include the first photonic devices and the second photonic devices disposed respectively below and above the contiguous interface;
- first and second dies disposed on the redistribution layer, wherein the first and the second dies are electrically connected to the redistribution layer;
- a first substrate under the first dielectric layer;
- conductive connectors under the first substrate;
- and
- vias going through the first and the second dielectric layers and the first substrate and electrically coupling the redistribution layer to the conductive connectors;
- wherein the second photonic devices include a photonic modulator, a photo detector, a grating coupler, or a combination thereof.
A semiconductor structure, comprising:
- an optical interposer including at least one first photonic device in a first dielectric layer and at least one second photonic device in a second dielectric layer, wherein the second dielectric layer is disposed above the first dielectric layer;
- a first die disposed on the optical interposer;
- a redistribution layer of the optical interposer connected to the first die, wherein the redistribution layer is over the second dielectric layer;
- a substrate under the optical interposer;
- and
- conductive connectors extending from a bottom of the substrate;
- wherein the first die and the optical interposer are exclusively connected by electrical connections.
Dependencies are inferred from the claim text.