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AssigneeExo Imaging, Inc.
InventorsBrian Bircumshaw, Sandeep Akkaraju
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The present disclosure provides methods to integrate pMUT arrays with an ASIC using solid liquid interdiffusion (SLID). In an aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT device and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using a conductive bonding pillar, which conductive bonding pillar comprises one or more intermetallic compounds. In another aspect, the present disclosure provides a device comprising a first substrate and a second substrate, the first substrate comprising a pMUT device and the second substrate comprising an electrical circuit, wherein the first substrate and the second substrate are bonded together using a conductive bonding pillar, wherein the bonding is performed at a temperature less than the melting point of the conductive bonding pillar after the bonding.
A device comprising at least one first substrate and a second substrate, the first substrate comprising a piezoelectric micromachined ultrasonic transducer (pMUT) device and the second substrate comprising at least one electrical circuit, wherein the first substrate and the second substrate are bonded together using a conductive bonding pillar and a conductive receiver pad, which conductive bonding pillar comprises a layered arrangement of a layer of a first metal or metal alloy between the second substrate and a layer of a second metal or metal alloy distinct from the first metal or metal alloy, and which conductive receiver pad comprises a layer of a third metal or metal alloy that is disposed on the first substrate and distinct from both the first metal or metal alloy and the second metal or metal alloy, wherein a melting temperature of the second metal or metal alloy is (i) less than a melting temperature of the first metal or metal alloy and (ii) less than a melting temperature of the third metal or metal alloy, and wherein the conductive bonding pillar is connected to the conductive receiver pad with the second metal or metal alloy being in contact with the third metal or metal alloy to form one or more solid liquid interdiffusion (SLID) bonds in a SLID bonding process between the second metal or metal alloy and the third metal or metal alloy, wherein the bonding comprises die-to-wafer bonding a plurality of singulated first substrates, each comprising a pMUT device, to the second substrate.
A method of fabricating an integrated device, the method comprising:
Dependencies are inferred from the claim text.