Method and device for measuring the state of health of semiconductor-based electronic components

A method for measuring the state of health, at several times ti, of at least one semiconductor-based power electronics component by computing a quantitative indicator D(ti) of the degradation of the power electronics component, in order to determine the progression of the aging of said power electronics component, the power electronics component having at least one input terminal and one output terminal for an electric current of intensity I, between which a voltage V is established,

• the power electronics component having a zero temperature coefficient point ZCP defined by an electric current I,ZCP and a voltage V,ZCP, ZCP being independent of the temperature,
• the method using an electric current sensor, a voltage sensor and a processor exchanging information with said sensors,
• the method comprising:
• a—a first step of determining, at an initial time t0, a first current value I(t0)=I,ZCP0 when the voltage V is equal to a voltage V(t0)=V,ZCP0, the power electronics component then being in an “initial time” state;
• b—a step of measuring a value of the current I at each subsequent time ti, when the voltage V at the time ti of the power electronics component is equal to the voltage V,ZCP0, the power electronics component then being in a “time ti” state;
• c—a step of the processor computing a quantitative indicator D(ti) of the aging of the power electronics component at each subsequent time ti, the value of which indicator depends on the variation in the value of the current I between the “initial time” state and the “time ti” state, the aging being independent of the voltage V,ZCP but dependent on the current I,ZCP, which decreases with aging.