Circuit, method, and apparatus for acquiring resistance values of multiple resistors of target system
AssigneeSanechips Technology Co., Ltd.
InventorsNiuyi Sun, Dan Yang, Na Mei, Tuobei Sun
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AssigneeSanechips Technology Co., Ltd.
InventorsNiuyi Sun, Dan Yang, Na Mei, Tuobei Sun
Estimating the term…
A circuit for acquiring a resistance value of a resistor includes: a working voltage node resistor Rb, a common ground voltage node resistor Rc, a reference node resistor Ra, a first interconnect parasitic resistor Rwire1, a second interconnect parasitic resistor Rwire2, an encapsulation network resistor Rnet, a first diode Dio_VDD, a Dio_Vss, and a Dio_die, wherein the working voltage node resistor Rb is respectively connected to one end of the Rwire1 and one end of the Rnet. The other end of the Rwire1 is connected to a negative electrode of the Dio_VDD, and a positive electrode of the Dio_VDD is respectively connected to the Ra and a negative electrode of the Dio_Vss. A positive electrode of the Dio_VSS is respectively connected to the Rc and a negative electrode of the Dio_die via the Rwire2. A positive electrode of the Dio_die is connected to the other end of the Rnet.
A circuit comprising:
A resistance value acquisition method based on a circuit comprising a working voltage node resistor Rb, a common ground voltage node resistor Rc, a reference node resistor Ra, a first interconnect parasitic resistor Rwire1, a second interconnect parasitic resistor Rwire2, an encapsulation network resistor Rnet, a first diode Dio_VDD, a second diode Dio_Vss, and a third diode Dio_die, wherein the working voltage node resistor Rb is respectively connected to one end of the first interconnect parasitic resistor Rwire1 and one end of the encapsulation network resistor Rnet;
A resistance value acquisition apparatus based on a circuit comprising a working voltage node resistor Rb, a common ground voltage node resistor Rc, a reference node resistor Ra, a first interconnect parasitic resistor Rwire1, a second interconnect parasitic resistor Rwire2, an encapsulation network resistor Rnet, a first diode Dio_VDD, a second diode Dio_Vss, and a third diode Dio_die, wherein the working voltage node resistor Rb is respectively connected to one end of the first interconnect parasitic resistor Rwire1 and one end of the encapsulation network resistor Rnet;
Dependencies are inferred from the claim text.