Semiconductor structure, integrated circuit and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Che Lee, Huai-Ying Huang, Yen-Chieh Huang, Kai-Wen Cheng, Yu-Ming Lin, Chung-Te Lin
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Abstract
A semiconductor structure is disclosed. The semiconductor structure includes a semiconductor substrate, a hydrogen sensing stacked layer disposed over the semiconductor substrate, and a protection layer disposed on the hydrogen sensing stacked layer. The hydrogen sensing stacked layer comprises a hydrogen-free oxide layer and a metal oxide layer disposed on the hydrogen-free oxide layer.
Claims20
A semiconductor structure, comprising:
- a semiconductor substrate;
- a hydrogen sensing stacked layer disposed over the semiconductor substrate, the hydrogen sensing stacked layer comprising a hydrogen-free oxide layer and a metal oxide layer disposed on the hydrogen-free oxide layer;
- and
- a dielectric protection layer disposed on the hydrogen sensing stacked layer.
An integrated circuit (IC), comprising:
- a semiconductor substrate comprising semiconductor devices;
- an interconnect structure disposed on the semiconductor substrate;
- and
- a hydrogen sensor embedded in the interconnect structure, wherein the hydrogen sensor comprises a transistor having a gate electrode, a source electrode, and a drain electrode and a hydrogen sensing stacked layer, the hydrogen sensing stacked layer serves as a channel layer of the transistor, the hydrogen sensing stacked layer comprises a hydrogen-free oxide layer and a metal oxide layer disposed on the hydrogen-free oxide layer, and the gate electrode is in contact with the hydrogen-free oxide layer.
A method of manufacturing an integrated circuit (IC) device, comprising:
- providing a semiconductor substrate comprising semiconductor devices;
- and
- forming an interconnect structure comprising an embedded hydrogen sensor, wherein the interconnect structure is disposed on the semiconductor substrate, the interconnect structure is electrically connected to the semiconductor devices, and a method for forming the interconnect structure comprises:
- forming first stacked dielectric layers and interconnect wirings embedded in the first stacked dielectric layer;
- forming the embedded hydrogen sensor on the first stacked dielectric layers;
- and
- forming second stacked dielectric layers covering the first stacked dielectric layers and the embedded hydrogen sensor.
Dependencies are inferred from the claim text.