Thin-film forming raw material, which is used in atomic layer deposition method, thin-film, method of producing thin-film, and zinc compound

A method of producing a thin-film containing a zinc atom on a surface of a substrate by an atomic layer deposition method, the method comprising:

• causing a raw material gas, which is obtained by vaporizing a thin-film forming raw material to adsorb to the surface of the substrate, to thereby form a precursor thin-film, wherein the thin-film forming raw material comprises a compound represented by the following general formula (1):
• M(R1)x1[A1−N(R2)(R3)]y(1)
• in the formula (1), R1, R2, and R3 each independently represent a linear or branched alkyl group having 1 to 4 carbon atoms, A1 represents a linear or branched alkylene group having 1 to 5 carbon atoms, x1 represents an integer of from 0 to 2, y1 represents an integer of from 1 to 3, and M represents a zinc atom;
• evacuating the raw material gas remaining unreacted;
• and
• causing the precursor thin-film to react with a reactive gas, to thereby form the thin-film containing a zinc atom on the surface of the substrate.