Film formation apparatus and film formation method of gallium nitride film

A film formation apparatus, comprising:

• a vacuum chamber capable of evacuating an interior thereof;
• a substrate support portion provided in the vacuum chamber and configured to support a substrate;
• a target support portion provided in the vacuum chamber and configured to support a target containing nitrogen and gallium;
• a sputtering gas supply unit connected to the vacuum chamber and configured to supply a sputtering gas to the vacuum chamber;
• a sputtering power source configured to apply a voltage to the target;
• a first radical supply source connected to the vacuum chamber and configured to be capable of supplying nitrogen radicals and hydrogen radicals to the vacuum chamber;
• and
• a control unit configured to control the sputtering gas supply unit, the sputtering power source, and the first radical supply source,
• wherein the control unit controls the sputtering gas supply unit, the sputtering power source, and the first radical supply source so that a first period in which the sputtering gas, the nitrogen radicals, and the hydrogen radicals are supplied to the vacuum chamber and a voltage is applied to the target and a second period in which the nitrogen radicals and the hydrogen radicals are not supplied to the vacuum chamber and a voltage is applied to the target are repeated.