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US 12,703,907 B2Granted
Molybdenum sputtering target assembly and method of making
AssigneeSolstice Advanced Materials US, Inc.
InventorsXiaodan Wu, Jaeyeon Kim, Susan D. Strothers, Rashmi Mohanty, Alicia Im
Life of this patent
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Abstract
A molybdenum sputtering target assembly includes molybdenum sputtering target diffusion bonded directly to a molybdenum backing plate. The molybdenum sputtering target consists of molybdenum and the molybdenum backing plate consists of molybdenum or a molybdenum alloy.
Claims10
A molybdenum sputtering target assembly comprising:
- a molybdenum sputtering target consisting of molybdenum and having a thickness of about 0.2 inches and about 0.6 inches;
- and
- a molybdenum backing plate consisting of molybdenum or a molybdenum alloy, the molybdenum backing plate immediately adjacent to and diffusion bonded directly to the molybdenum sputtering target, wherein the molybdenum sputtering target has an average grain size of less than about 50 μm and wherein the grain size differs by not more than +/−5 μm through the thickness of the molybdenum sputtering target.
A method for forming a sputtering target assembly, the method comprising:
- positioning a molybdenum sputtering target immediately adjacent to a molybdenum backing plate;
- and
- diffusion bonding the molybdenum sputtering target directly to the molybdenum backing plate by hot isostatic pressing at a pressure equal to or greater than 15 ksi and a temperature of from about 700° C. and about 1500° C.,
- wherein the molybdenum sputtering target consists of molybdenum and has a thickness of about 0.2 inches and about 0.6 inches, and
- wherein the molybdenum backing plate consists of molybdenum or a molybdenum alloy and
- wherein after the diffusion bonding, the molybdenum sputtering target has an average grain size of less than about 50 μm and wherein the grain size differs by +/−5 μm through the thickness of the molybdenum sputtering target.
3 more elements
Dependencies are inferred from the claim text.