Compositions for manufacturing thin film and methods for manufacturing semiconductor device using the same

A method for manufacturing a semiconductor device, the method comprising:

• providing a substrate including an active region;
• forming a lower electrode on the substrate so as to be connected to the active region;
• and
• forming a capacitor dielectric film disposed along a profile of the lower electrode,
• wherein forming the capacitor dielectric film includes sequentially providing a composition for manufacturing a thin film, and a metal,
• wherein the composition for manufacturing the thin film includes a compound having a structure of Chemical Formula 1:
• wherein M is strontium (Sr) or barium (Ba),
• X1 and X2 are each independently oxygen (O) or a substituted or unsubstituted alkylamino group having 1 to 5 carbon atoms,
• R1 and R2 are each independently a perfluoro alkyl group having 1 to 5 carbon atoms, wherein R1 and R2 are different from each other,
• R3 is hydrogen or a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms,
• L is a substituted or unsubstituted polyether having 1 to 6 oxygen atoms, a substituted or unsubstituted polyamine having 1 to 6 nitrogen atoms, or a substituted or unsubstituted polyetheramine having 1 to 6 oxygen atoms and 1 to 6 nitrogen atoms, and
• n is an integer of 1 to 6.