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US 12,703,713 B2Granted
Tin compound and resist solution using the same, pattern forming method, thin film, patterned thin film, and method for producing tin compound
AssigneesMitsubishi Chemical Corporation, Gelest, Inc.
InventorYuta Hioki
Life of this patent
Estimating the term…
Abstract
As a high-performance resist material that can have high purity and uniform solubility, the following tin compound is provided. The tin compound includes: a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand, wherein the tin compound has a diffraction angle 2θ (°) of a peak with a strongest intensity between 5.00 to 15.00° in X-ray diffraction measurement, the strongest intensity peak has a half-value width of 1.00 to 4.00°, and the organic group R has 1 to 30 carbon atoms.
Claims20
A tin compound, comprising:
- a tin atom;
- at least one organic group R bonded to the tin atom;
- and
- at least one of an oxo-ligand and a hydroxo-ligand bonded to the tin atom, wherein the tin compound has a diffraction angle 2θ (*) of a peak with a strongest intensity between 5.00 to 15.00° in an X-ray diffraction measurement,
- wherein the strongest intensity peak has a half-value width of 1.00 to 4.00°, and
- wherein the organic group R has 1 to 30 carbon atoms.
3 more elements
Dependencies are inferred from the claim text.