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US 12,703,657 B2Granted
Glass substrate for high-frequency device and circuit board for high-frequency device
AssigneeAGC Inc.
InventorsKazutaka Ono, Shuhei Nomura, Nobutaka Kidera, Nobuhiko Takeshita
Life of this patent
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Abstract
A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
Claims11
A glass substrate, comprising:
- a glass composition comprising, in terms of mole percent on a basis of oxides:
- 40 to 75% of SiO2;
- 0 to 10% of Al2O3;
- 13 to 36% of B2O3;
- and
- 0.1 to 6% of CaO,
- wherein
- a total content of Al2O3 and B2O3 is in a range of 13-40%,
- a total content of alkaline earth metal oxides is in a range of 0.1-6%, and
- a total content of alkali metal oxides is in a range of 0.001-5%,
- wherein the glass composition has a molar ratio Al2O3/(Al2O3+B2O3) in a range of 0-0.45, at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.
8 more elements
Dependencies are inferred from the claim text.