Composite body comprising silicon carbide and method for producing same

A silicon carbide composite body, comprising:

• a first base material including a single crystal silicon carbide or a polycrystalline silicon carbide on at least a part of an upper surface;
• and
• a second base material including an element M which is one or more of metal elements (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, C in diamond, and C in silicon carbide on at least a part of a lower surface,
• wherein the bonding interface between the upper surface of the first base material, which is the (0001) plane of the single crystal silicon carbide, and the lower surface of the second base material includes Si—O-M bondings between at least some of Si of the (0001) plane of the single crystal silicon carbide on the upper surface of the first base material and at least some of M on the lower surface of the second base material.

A silicon carbide composite body, comprising:

• a first base material including a single crystal silicon carbide or a polycrystalline silicon carbide on at least a part of an upper surface;
• an intermediate layer composed of a silicon carbide oxide and having a thickness of 2.6 nm or less;
• a second base material including an element M which is one or more of metal elements (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, C in diamond, and C in silicon carbide on at least a part of a lower surface,
• wherein the upper surface of the first base material and the lower surface of the second base material are bonded via the intermediate layer, and the intermediate layer includes C—O-M bondings between at least some of C of the (000-1) plane of the single crystal silicon carbide on the upper surface of the first base material and at least some of M on the lower surface of the second base material or Si—O-M bondings between at least some of Si of the (0001) plane of the single crystal silicon carbide on the upper surface of the first base material and at least some of M on the lower surface of the second base material.