Soldering device including pulsed light irradiator, soldering method using pulsed light irradiation, and method of manufacturing semiconductor package

A soldering method, comprising:

• sequentially loading a plurality of workpieces into a soldering member comprising at least one pulsed light irradiator in a linear movement scheme, each workpiece of the plurality of workpieces including
• a main substrate,
• an electronic device on the main substrate, and
• a solder material layer between the main substrate and the electronic device;
• setting a time width of a light pulse irradiated from the at least one pulsed light irradiator and an irradiation period of the light pulse;
• calculating a power Ep of the light pulse according to Equation 1:
• E
• P
• =
• V
• 3
• ⁢
• t
• P
• K
• 0
• 2
• [
• Equation
• ⁢
• 1
• ]
• wherein, in Equation 1,
• V denotes a charging voltage of the at least one pulsed light irradiator,
• tp denotes the time width of the light pulse, and
• K0 denotes an impedance of the at least one pulsed light irradiator;
• measuring a temperature of the electronic device comprised in each of the plurality of workpieces in a soldering chamber;
• predicting a final rise temperature ΔT of the electronic device to determine a predicted final rise temperature ΔT of the electronic device according to Equation 2:
• Δ
• ⁢
• T
• =
• ∑
• n
• =
• 1
• N
• E
• P
• cM
• -
• (
• aT
• +
• b
• )
• ⁢
• (
• 1
• /
• f
• )
• [
• Equation
• ⁢
• 2
• ]
• wherein, in Equation 2,
• c denotes a specific heat of the electronic device,
• M denotes a weight of the electronic device,
• T denotes the temperature of the electronic device, which is measured in real time in the soldering chamber immediately before subsequent irradiation of pulsed light,
• f denotes the irradiation period of the light pulse,
• each of a and b denotes a particular constant that determines a temperature attenuation function represented by “aT+b,” and
• N denotes a quantity of exposures of light pulses to the electronic device;
• changing at least one of the power Ep of the light pulse, the time width tp of the light pulse, or the irradiation period f of the light pulse in response to a determination that the predicted final rise temperature ΔT of the electronic device deviates from a particular temperature range to produce at least one changed value;
• and
• applying a single light pulse to each of the plurality of workpieces by using the at least one pulsed light irradiator under setting conditions used to predict the final rise temperature ΔT of the electronic device, in response to a determination that the predicted final rise temperature ΔT of the electronic device is within the particular temperature range.