Redistribution structure with copper bumps on planar metal interconnects and methods of forming the same

A method of forming a semiconductor structure, comprising:

• forming first redistribution interconnect structures of an interposer on a top surface of a first adhesive layer over a first carrier wafer, wherein each of the first redistribution interconnect structures has a respective first planar surface located entirely within a first horizontal plane;
• forming redistribution dielectric layers and additional redistribution interconnect structures over the first redistribution interconnect structures, whereby at least one redistribution structure including a respective subset of the first redistribution interconnect structures, a respective portion of the redistribution dielectric layers, and a respective subset of the additional redistribution interconnect structures is formed;
• attaching a respective set of one or more semiconductor dies to each of the at least one redistribution structure while the first adhesive layer and the first carrier wafer are attached to a backside of the at least one redistribution structure;
• physically exposing the first planar surfaces of the first redistribution interconnect structures by removing the first carrier wafer and the first adhesive layer after the respective set of one or more semiconductor dies is attached to each of the at least one redistribution structure;
• and
• forming fan-out bump structures on the physically exposed first planar surfaces of the first redistribution interconnect structures.

A method of forming a semiconductor structure, comprising:

• forming first redistribution interconnect structures of an interposer on a top surface of a first adhesive layer over a first carrier wafer, wherein each of the first redistribution interconnect structures has a respective first planar surface located entirely within a first horizontal plane;
• forming redistribution dielectric layers and additional redistribution interconnect structures over the first redistribution interconnect structures, whereby at least one redistribution structure including a respective subset of the first redistribution interconnect structures, a respective portion of the redistribution dielectric layers, and a respective subset of the additional redistribution interconnect structures is formed;
• attaching a respective set of one or more semiconductor dies to each of the at least one redistribution structure while the first adhesive layer and the first carrier wafer are attached to a backside of the at least one redistribution structure;
• removing the first carrier wafer and the first adhesive layer after the respective set of one or more semiconductor dies is attached to each of the at least one redistribution structure;
• and
• forming fan-out bump structures on the physically exposed first planar surfaces of the first redistribution interconnect structures.