Method for producing an optoelectronic device comprising axial light-emitting diodes

Method of manufacturing an optoelectronic device comprising light-emitting diodes comprising three-dimensional semiconductor elements, comprising forming the three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, with a polarity of the group-III element of the III-V compound, the method further comprising, for each semiconductor element, forming an active area covering the top of the semiconductor element and a stack of semiconductor layers covering the active area, the active area being formed by vapor deposition at a pressure lower than 66.6 mPa and comprising quantum wells separated by barrier layers, each quantum well comprising a ternary alloy comprising at least one first group-III element, the group-V element of the III-V compound, and a second group-III element, each barrier layer comprising the III-V compound, wherein, for the forming of each quantum well, the ratio of the atomic flux of the first and second group-III elements to the atomic flux of the group-V element is in the range from 1 to 1.8, the ratio of the atomic flux of the first group-III element to the atomic flux of the group-V element varies from 0.01 to 1, and the ratio of the atomic flux of the second group-III element to the atomic flux of the group-V element varies from 0.05 to 5, and wherein, for the forming of each barrier layer, the ratio of the atomic flux of the group-III element of the III-V compound to the atomic flux of the group-V element varies from 0.2 to 0.6.