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US 12,702,054 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorYuko Nakamata
Life of this patent
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Abstract
A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.
Claims17
A semiconductor device comprising:
- a SiC semiconductor element mounted on a multilayer substate and an electrically conductive connection member;
- and
- a sealant that seals the SiC semiconductor element and the electrically conductive connection member, containing:
- a matrix resin containing an epoxy resin base material,
- an inorganic filler and
- an ultraviolet light absorbent,
- wherein
- the ultraviolet light absorbent is an organic material having an average particle size of 10 nm to 5000 nm, which absorbs 30% or more of ultraviolet light having a wavelength of 370 nm emitted from the SiC semiconductor element, and
- the content of the ultraviolet light absorbent is 0.1 parts to 10 parts by mass relative to 100 parts by mass of the matrix resin, and
- the content of the inorganic filler is 200 parts to 400 parts by mass, relative to 100 parts by mass of the matrix resin.
7 more elements
Dependencies are inferred from the claim text.