Package structure and method of manufacturing the same

A package structure, comprising:

• a plurality of semiconductor dies, having conductive terminals and a protection layer covering sidewalls of the conductive terminals;
• an insulating encapsulation, laterally encapsulating the plurality of semiconductor dies and exposing the conductive terminals;
• and
• a surface-modifying film, disposed on the insulating encapsulation, wherein the surface-modifying film and the protection layer are bonded to each other through a Si—O—C bond, wherein a Si—O of the Si—O—C bond is included in the protection layer and a carbon of the Si—O—C bond bonded to the Si—O is included in the surface-modifying film.

A method of manufacturing a package structure, comprising:

• providing a semiconductor die having conductive terminals and a protection layer covering sidewalls of the conductive terminals;
• forming a surface-modifying film on the semiconductor die to form a bonding interface having a Si—O—C bond between the protection layer and the surface-modifying film, wherein a Si—O of the Si—O—C bond is included in the protection layer and a carbon of the Si—O—C bond bonded to the Si—O is included in the surface-modifying film;
• forming a first redistribution circuit structure over the semiconductor die and electrically connecting to the semiconductor die through the conductive terminals, edges of the conductive terminals being exposed by the plurality of openings formed in the surface-modifying film, wherein the first redistribution circuit structure is separated from the protection layer by the surface-modifying film, and the surface-modifying film is disposed between the first redistribution circuit structure and the semiconductor die;
• and
• disposing conductive elements over the first redistribution circuit structure, wherein the first redistribution circuit structure is electrically coupled to and disposed between the conductive elements and the semiconductor die.