Substrate trench for improved hybrid bonding

A system, comprising:

• a substrate, wherein a highest elevation of the substrate comprises a bonding surface of a first pedestal and a bonding surface of a second pedestal, and wherein a recessed surface of the substrate surrounds a perimeter of each of the first and second pedestals, and wherein the bonding surface of each of the first and second pedestals comprises a plurality of first metallic interconnect interfaces and a first dielectric material;
• and
• first and second integrated circuit (IC) dies, each one of the IC dies hybrid bonded exclusively to one of the bonding surfaces of a corresponding single one of the first and second pedestals, wherein a bonding surface of each of the first and second IC dies comprises a plurality of second metallic interconnect interfaces in direct contact with the first metallic interconnect interfaces and a second dielectric material in direct contact with the first dielectric material, wherein a peripheral portion of the first IC die beyond the bonding surface of the first IC die extends beyond a sidewall of the first pedestal and overhangs the recessed surface on all sides of the first pedestal, and wherein a peripheral portion of the second IC die beyond the bonding surface of the second IC die extends beyond a sidewall of the second pedestal and overhangs the recessed surface on all sides of the second pedestal.