Metal component including phosphorous-containing nickel layer
AssigneeMitsui High-Tec, Inc.
InventorsKento Koga, Yoshihito Miyauchi, Kazunori Watanabe, Kimihiko Kubo
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Abstract
There is provided a metal component used for manufacturing a semiconductor device, including: a base material having an electrical conductivity; a nickel layer formed on a surface of the base material and containing nickel as a main component; and a noble metal layer formed on a surface of the nickel layer. The nickel layer includes a first nickel layer not containing phosphorus, and a second nickel layer containing 0.01 to 1 in percent by weight of phosphorus. According to the metal component of the present disclosure, a thickness of the nickel layer can be reduced while good characteristics can be maintained.
Claims8
A metal component used for manufacturing a semiconductor device, the metal component comprising:
- a base material having an electrical conductivity;
- a nickel layer formed on a surface of the base material and containing nickel as a main component;
- and
- a noble metal layer formed on a surface of the nickel layer, wherein
- the nickel layer includes a first nickel layer not containing phosphorus, and a second nickel layer containing 0.01 to 0.2 in percent by weight of phosphorus.
A metal component used for manufacturing a semiconductor device, the metal component comprising:
- a base material having an electrical conductivity;
- a nickel layer formed on a surface of the base material and containing nickel as a main component;
- and
- a noble metal layer formed on a surface of the nickel layer, wherein
- the nickel layer includes a first nickel layer not containing phosphorus, a second nickel layer containing 0.01 to 1 in percent by weight of phosphorus formed on a first surface of the first nickel layer, and a third nickel layer containing 0.01 to 1 in percent by weight of phosphorus is formed on a second surface of the first nickel layer.
Dependencies are inferred from the claim text.