Semiconductor device

Abstract

A stacked semiconductor device capable of increasing heat dissipation comprises a first member and a second member. The first member includes a semiconductor substrate and a first electronic circuit. The first electronic circuit includes a semiconductor element provided on one surface of the semiconductor substrate. A second member is attached to a first surface, which is one surface of the first member. The second member includes a second electronic circuit including another semiconductor element. The second member is provided with a first opening that penetrates the second member in a thickness direction. A first conductor projection is coupled to the first electronic circuit. The first conductor projection protrudes from the first surface of the first member through the first opening of the second member to the outside of the first opening.

Dependencies are inferred from the claim text.