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US 12,702,009 B2Granted
Semiconductor device and manufacturing method thereof
AssigneenD-HI Technologies Lab, Inc.
InventorHo-Ming Tong
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate module and a first processor. The substrate module includes a first substrate, a first voltage regulator component and a first grounded Faraday component. The first voltage regulator component is embedded in the first substrate and includes a plurality of surfaces. The first grounded Faraday component is embedded in the first substrate and covers one or more of the surfaces of the first voltage regulator component. The first processor is disposed over the substrate module.
Claims13
A semiconductor device, comprising:
- a substrate module, comprising:
- a first substrate;
- a first voltage regulator component embedded in the first substrate and comprising a plurality of surfaces;
- a first grounded Faraday component embedded in the first substrate and covering one or more of the surfaces of the first voltage regulator component;
- and
- a first processor disposed over the substrate module;
- wherein the first substrate has a recess within which the first voltage regulator component is disposed, the recess extends from an upper surface of the first substrate, the upper surface is high than the first voltage regulator component.
4 more elements
Dependencies are inferred from the claim text.