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US 12,702,002 B2Granted
Double-sided heat dissipation power semiconductor module and method of manufacturing the same
AssigneeLx Semicon Co., Ltd.
InventorsDeog Soo Kim, Tae Ryong Kim
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Abstract
The present disclosure relates to a technology relating to a power semiconductor module of which heat is dissipated through both sides thereof and provides a technology for maintaining a distance between an upper substrate and a lower substrate by a metal bump formed on one side of a power semiconductor die.
Claims8
A power semiconductor module comprising:
- a die structure in which a metal bump is formed on one side of a power semiconductor die;
- a first substrate to be electrically connected to a first electrode formed on the one side of the power semiconductor die through the metal bump;
- and
- a second substrate to be electrically connected to a second electrode formed on another side of the power semiconductor die and to support the other side of the power semiconductor die,
- wherein the metal bump is directly in contact with the one side of the power semiconductor die without a bonding layer,
- wherein a lateral width of the metal bump is the same as that of the die structure,
- wherein the metal bump is disposed on only the one side of the power semiconductor die,
- wherein the die structure is bonded to the first substrate through a first bonding member disposed on one side of the metal bump and bonded to the second substrate through a second bonding member disposed on the other side of the power semiconductor die without a spacer disposed between the die structure and the first substrate or between the die structure and the second substrate, and
- wherein the metal bump is formed through electroless plating on the one side of the power semiconductor die.
6 more elements
Dependencies are inferred from the claim text.