Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a substrate including a frontside and a backside opposite to the frontside;
• a first electronic device on the frontside of the substrate;
• an interlayer insulating layer covering the first electronic device;
• a frontside wiring structure electrically connected to the first electronic device, on the interlayer insulating layer;
• a backside wiring structure on the backside of the substrate;
• a first through plug passing through the substrate to be connected to the backside wiring structure, the first through plug extending longer in a first direction;
• a first vertical plug passing through the interlayer insulating layer to be connected to the first through plug, the first vertical plug having a first resistivity;
• a first source/drain contact connecting the first electronic device with the first vertical plug, on the interlayer insulating layer;
• a second vertical plug spaced apart from the first vertical plug in the first direction and passing through the interlayer insulating layer, the second vertical plug having a second resistivity greater than the first resistivity;
• and
• a second through plug passing through the substrate to be connected with the second vertical plug, the second through plug extending longer in a second direction perpendicular to the first direction.

A semiconductor device comprising:

• a substrate including a frontside and a backside opposite to the frontside;
• a first electronic device on the frontside of the substrate;
• an interlayer insulating layer covering the first electronic device;
• a frontside wiring structure on the interlayer insulating layer;
• a backside wiring structure on the backside of the substrate extending longer in a first direction;
• a first through plug passing through the substrate, the first through plug extending longer in the first direction;
• a first vertical plug passing through the interlayer insulating layer to be connected to the first through plug, the first vertical plug having a first resistivity;
• a source/drain contact connecting the first electronic device with the first vertical plug, on the interlayer insulating layer;
• a second through plug spaced apart from the first through plug and passing through the substrate, the second through plug electrically connected to the backside wiring structure;
• and
• a second vertical plug passing through the interlayer insulating layer to connect the frontside wiring structure with the second through plug, the second vertical plug having a second resistivity smaller than the first resistivity.