Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of processing a substrate, comprising:

• (a) supplying a modifying gas to a substrate, which includes a first base and a second base on a surface of the substrate, to modify a surface of the first base that is terminated with a hydroxyl group;
• and
• (b) forming a film containing at least a first element and a second element different from the first element on a surface of the second base by supplying a precursor gas to the substrate after the surface of the first base is modified, under a condition that a film-forming reaction by thermal decomposition of the precursor gas does not substantially occur, the precursor gas containing a compound in which two or more atoms of the first element are contained in one molecule, at least one atom of the second element is interposed between two atoms of the first element, and each of the two or more atoms of the first element is directly bonded to one of the at least one atom of the second element,
• wherein in (a), a fluorine-containing gas and a silicon-containing gas are each used as the modifying gas, which modifies the surface of the first base to suppress the film from being formed on the modified surface of the first base,
• wherein (a) includes:
• (a1) supplying the silicon-containing gas to the substrate;
• and
• (a2) supplying the fluorine-containing gas to the substrate, and
• wherein (a1) and (a2) are performed in this order.