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US 12,701,931 B2Granted
Method of selectively forming phosphorous-doped epitaxial material on a surface
AssigneeASM IP Holding B.V.
InventorsBrendan Timothy Padraig Marozas, Rami Khazaka
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Abstract
Methods and systems for selectively forming phosphorus-doped epitaxial material. The methods can be used to selectively form the phosphorus-doped epitaxial material within a gap from the bottom upward. Exemplary methods can be used to, for example, form source and/or drain regions in field effect transistor devices, such as in gate-all-around field effect transistor devices.
Claims20
A method of selectively forming P-doped monocrystalline material on a surface of a substrate, the method comprising steps of:
- providing a substrate within a reaction chamber, the substrate comprising a bottom surface comprising a first crystallographic orientation and a sidewall surface, which is perpendicular to the bottom surface, comprising a second crystallographic orientation, the bottom surface and the sidewall surface comprising the same material;
- performing a cyclical deposition process to selectively form P-doped epitaxial material overlying the bottom surface, relative to the sidewall surface, the cyclical deposition process comprising one or more deposition cycles, each deposition cycle comprising:
- forming first P-doped epitaxial material overlying the bottom surface and overlying a first portion of the sidewall surface extending from the bottom surface to a point of the sidewall surface at a height of the first P-doped epitaxial material in a vertical direction and forming second P-doped epitaxial or P-doped non-epitaxial material overlying a second portion of the sidewall surface extending vertically from the point of the sidewall surface at the height of the first P-doped epitaxial material in the vertical direction;
- forming first intrinsic epitaxial material overlying an exposed top surface of the first P-doped epitaxial material overlying the bottom surface and forming second intrinsic epitaxial or intrinsic non-epitaxial material overlying the second P-doped epitaxial or P-doped non-epitaxial material overlying the sidewall surface and extending vertically from a top surface of the first intrinsic epitaxial material in the vertical direction;
- and
- selectively etching the second intrinsic epitaxial or intrinsic non-epitaxial material and the second P-doped epitaxial or P-doped non-epitaxial material overlying the sidewall surface, relative to the first intrinsic epitaxial material and the first P-doped epitaxial material overlying the bottom surface,
- wherein the bottom surface consists of a Si{100} crystal facet, and
- wherein the sidewall surface comprises one or more of a Si{110} crystal facet and a higher order silicon crystal facet that is perpendicularly oriented to a Si{100} crystal facet.
5 more elements
A method of selectively forming P-doped monocrystalline material on a surface of a substrate, the method comprising steps of:
- providing a substrate within a reaction chamber, the substrate comprising a bottom surface comprising a first crystallographic orientation and a sidewall surface comprising a second crystallographic orientation, the bottom surface and the sidewall surface comprising the same material;
- performing a cyclical deposition process to selectively form P-doped epitaxial material overlying the bottom surface, relative to the sidewall surface, the cyclical deposition process comprising one or more deposition cycles, each deposition cycle comprising:
- forming first P-doped epitaxial material overlying the bottom surface and forming second P-doped epitaxial or P-doped non-epitaxial material overlying the sidewall surface;
- forming first intrinsic epitaxial material overlying the first P-doped epitaxial material overlying the bottom surface and forming second intrinsic epitaxial or intrinsic non-epitaxial material overlying the second P-doped epitaxial or P-doped non-epitaxial material overlying the sidewall surface above the first intrinsic epitaxial material;
- and
- selectively etching the second intrinsic epitaxial or intrinsic non-epitaxial material and the second P-doped epitaxial or P-doped non-epitaxial material overlying the sidewall surface, relative to the first intrinsic epitaxial material and the first P-doped epitaxial material overlying the bottom surface,
- wherein the first intrinsic epitaxial material serves as a cap that protects the first P-doped epitaxial material overlying the bottom surface during the selectively etching,
- wherein the bottom surface consists of a Si{100} crystal facet,
- wherein the sidewall surface comprises one or more of a Si{110} crystal facet and a higher order silicon crystal facet that is perpendicularly oriented to a Si{100} crystal facet, and
- wherein the first intrinsic epitaxial material serves as a cap that protects the first P-doped epitaxial material overlying the bottom surface during the selectively etching of the second intrinsic epitaxial or intrinsic non-epitaxial material and the second P-doped epitaxial or P-doped non-epitaxial material overlying the sidewall surface.
7 more elements
Dependencies are inferred from the claim text.