Rapid layer-specific photonic annealing of perovskite thin films

Abstract

Disclosed herein are methods of annealing a perovskite layer, comprising irradiating the perovskite layer with a light source, wherein the light source is a UV light emitting diode or array of UV-LEDs for rapid and large-area exposure without scanning over the perovskite film, wherein the light source emits radiation consisting essentially of wavelengths within 50 nm of the wavelength of maximum absorbance (λmax) of the perovskite layer, thereby annealing the perovskite layer. Also disclosed herein are semiconducting devices and articles of manufacture comprising an annealed perovskite layer made by any of the methods described herein, such as solar cells, light-emitting diodes, photodetectors, thin-film transistors, laser diodes, and combinations thereof.

Dependencies are inferred from the claim text.