Display panel arranged with heavily doped semiconductor connection line display and method of preparing the same

A method of preparing a display panel, comprising:

• providing a substrate, wherein the substrate comprises an effective display region and a non-display region adjacent to the effective display region, and the substrate comprises a silicon-containing compound material;
• arranging a display unit and a binding portion on the substrate, wherein the display unit is formed in the effective display region on a side of the substrate, and the binding portion is formed in the non-display region on a side of the display unit;
• arranging a plurality of signal connection lines in the non-display region between the effective display region and the binding portion, and electrically connecting two ends of each of the plurality of signal connection lines to a drive circuit layer and the binding portion, respectively, wherein at least a part of each of the plurality of signal connection lines is configured as a heavily doped semiconductor connection line;
• arranging an encapsulation layer;
• successively arranging a first encapsulation layer, a second encapsulation layer, a third encapsulation layer, which are laminated, in a direction away from the substrate,
• wherein the first encapsulation layer and the third encapsulation layer comprise a silicon-containing compound material, and the second encapsulation layer comprises an organic material;
• the first encapsulation layer is arranged to wrap around the display unit and a portion of each of the plurality of signal connection lines;
• at least a portion of each of the plurality of signal connection lines disposed inside a region covered by the encapsulation layer is configured as the heavily doped semiconductor connection line, and the first encapsulation layer wraps around the heavily doped semiconductor connection line;
• and
• the portion of each of the plurality of signal connection lines covered by the encapsulation layer comprises a metal connection line and the heavily doped semiconductor connection line connected to the metal connection line;
• and lattice of the heavily doped semiconductor connection line is matched with lattice of the first encapsulation layer;
• wherein the arranging a plurality of signal connection lines in the non-display region between the effective display region and the binding portion, and electrically connecting two ends of each of the plurality of signal connection lines to a drive circuit layer and the binding portion, respectively, comprises:
• forming the heavily doped semiconductor connection line by performing chemical vapor deposition or ion injection;
• exposing the heavily doped semiconductor connection line to the air to form an inorganic oxide layer on a surface of the heavily doped semiconductor connection line;
• wherein, the inorganic oxide layer wraps around the surface of the heavily doped semiconductor layer;
• the first encapsulation layer directly covers the inorganic oxide layer;
• lattice of the inorganic oxide layer, lattice of the heavily doped semiconductor layer, and the lattice of the first encapsulation layer match each other.

A display device, comprising:

• a display panel, configured to display images;
• and
• a control board, bound to a binding portion and configured to control, through the binding portion, the display panel to display images,
• wherein the display panel comprises:
• a substrate, comprising an effective display region and a non-display region adjacent to the effective display region, wherein the substrate comprises a silicon-containing compound material;
• a display unit, configured to display an image and arranged in the effective display region, which is located on a side of the substrate;
• a binding unit, arranged in the non-display region, which is located on a side of the substrate, and comprising a binding portion and a plurality of signal connection lines, wherein two ends of each of the plurality of signal connection lines are connected to the display unit and the binding portion, respectively;
• an encapsulation layer, wrapping the display unit and a part of the plurality of signal connection lines, and configured to encapsulate the display unit and the plurality of signal connection lines, wherein the encapsulation layer comprises a first encapsulation layer, a second encapsulation layer and a third encapsulation layer, which are laminated successively in a direction away from the substrate;
• the first encapsulation layer and the third encapsulation layer comprise the silicon-containing compound material, and the second encapsulation layer comprises an organic material;
• wherein the encapsulation layer covers a portion of each of the plurality of signal connection lines, at least a portion of each of the plurality of signal connection lines disposed inside a region covered by the encapsulation layer is configured as a heavily doped semiconductor connection line, and the first encapsulation layer wraps around the heavily doped semiconductor connection line;
• the portion of each of the plurality of signal connection lines covered by the encapsulation layer comprises a metal connection line and the heavily doped semiconductor connection line connected to the metal connection line;
• and lattice of the heavily doped semiconductor connection line is matched with lattice of the first encapsulation layer;
• the heavily doped semiconductor connection line comprises a heavily doped semiconductor layer and an inorganic oxide layer wrapping around a surface of the heavily doped semiconductor layer;
• an inorganic oxide substance of the inorganic oxide layer is formed by a semiconductor material of the heavily doped semiconductor layer being oxidized;
• the first encapsulation layer directly covers the inorganic oxide layer;
• lattice of the inorganic oxide layer, lattice of the heavily doped semiconductor layer, and the lattice of the first encapsulation layer match each other.