US 12,701,849 B2Granted

Light emitting structures formed in opening in a mask and preparation method therefor

AssigneeEnkris Semiconductor, Inc.

InventorKai Cheng

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Abstract

Disclosed are a light emitting structure and a preparation method therefor. The method includes: forming a mask layer on a n-type substrate, disposing a plurality of openings in the mask layer; and forming a light emitting unit in each of the plurality of openings, including: forming a metal atomic layer in the opening; forming an n-type semiconductor layer on the metal atomic layer, and forming a light extraction structure on the n-type semiconductor layer; and sequentially forming an active layer and a p-type semiconductor layer on the n-type semiconductor layer and the light extraction structure. In this way, step of peeling off the substrate may be avoided. In addition, with a plurality of discrete light emitting structures formed on the same substrate, a step of cutting a device is avoided, and damage to the device can be prevented.

Claims10

Dependent claims

A light emitting structure, comprising:

a substrate, wherein the substrate is an n-type substrate;
a mask layer formed on the substrate, wherein a plurality of openings are disposed in the mask layer;
and
a plurality of light emitting units formed in the plurality of openings respectively, wherein each of the plurality of light emitting units sequentially comprises a metal atomic layer, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer from bottom to top, at least one groove is disposed on the n-type semiconductor layer, and a light extraction structure is disposed in the at least one groove;
a first electrode separately disposed on each of the plurality of light emitting units;
and
a second electrode disposed on a side of the substrate away from the mask layer, wherein the plurality of light emitting units formed in the plurality of openings respectively share the second electrode.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/175,325Filed 27 Feb 2023 · continuation
Priority: 11 Nov 2020
Published: US 2023/0215906 A16 Jul 2023
Granted: 4 Aug 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10H 20/01335
With a substrate not being Group III-V materials: the light-emitting regions comprising nitride materials
H10H 29/142
Comprising multiple light-emitting semiconductor components: two-dimensional arrangements, e.g. asymmetric LED layout
H10H 20/814
Bodies: having reflecting means, e.g. semiconductor Bragg reflectors
H10H 20/82
Characterised by their shape, e.g. curved or truncated substrates: roughened surfaces, e.g. at the interface between epitaxial layers