Solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorTakuya Kurihara
Life of this patent
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Abstract
Provided is a solid-state imaging device capable of forming a pixel separation groove having a suitable action in a substrate. A solid-state imaging device of the present disclosure includes: a first photoelectric conversion unit and a second photoelectric conversion unit that are provided in a first semiconductor substrate and are adjacent to each other; a first pixel separation groove provided between the first photoelectric conversion unit and the second photoelectric conversion unit not to penetrate through the first semiconductor substrate; and a second pixel separation groove provided to penetrate through the first semiconductor substrate.
Claims20
A solid-state imaging device comprising:
- first and second photoelectric conversion units that are provided in a first semiconductor substrate and are adjacent to each other;
- a first pixel separation groove provided between the first photoelectric conversion unit and the second photoelectric conversion unit and configured not to penetrate through the first semiconductor substrate so as to permit charge transfer between the first and second photoelectric conversion units in at least one operating mode;
- a second pixel separation groove provided to penetrate through the first semiconductor substrate and configured to electrically isolate the first and second photoelectric conversion units from other photoelectric conversion units in the first semiconductor substrate;
- and
- first and second transfer transistors respectively associated with the first and second photoelectric conversion units, the first and second transfer transistors being operable to selectively enable or disable the charge transfer permitted by the first pixel separation groove.
A solid-state imaging device comprising:
- first and second photoelectric conversion units that are provided in a first semiconductor substrate and are adjacent to each other;
- a floating diffusion unit provided in the first semiconductor substrate;
- first and second transfer transistors respectively provided under the first and second photoelectric conversion units;
- and
- a first pixel separation groove provided between the first photoelectric conversion unit and the second photoelectric conversion unit and configured not to penetrate through the first semiconductor substrate, the floating diffusion unit being provided under the first pixel separation groove in the first semiconductor substrate,
- wherein the first and second transfer transistors operate to provide
- a first mode in which a path of a charge from the first photoelectric conversion unit to the floating diffusion unit is closed and a path of a charge from the first photoelectric conversion unit to the second photoelectric conversion unit is closed,
- a second mode in which the path of the charge from the first photoelectric conversion unit to the floating diffusion unit is closed, and the path of the charge from the first photoelectric conversion unit to the second photoelectric conversion unit is opened, and
- a third mode in which the path of the charge from the first photoelectric conversion unit to the floating diffusion unit is opened.
Dependencies are inferred from the claim text.