Silicon photomultiplier tube

A silicon photomultiplier tube, wherein each unit structure comprises:

• a silicon substrate;
• a shallow trench isolation formed on the silicon substrate;
• a first electrode region heavily doped in a first conductive type located on a surface of the silicon substrate on a first side of the shallow trench isolation;
• a second electrode region heavily doped in a second conductive type located on a surface of the silicon substrate on a second side of the shallow trench isolation;
• and
• a quenching resistor located on a top surface of the shallow trench isolation,
• a photosensitive layer is formed in the silicon substrate at a bottom of the first electrode region,
• the first electrode region, the photosensitive layer, and the second electrode region form a Geiger mode avalanche photodiode,
• a first end of the quenching resistor is connected to the first electrode region through a first metal interconnect structure,
• a second end of the quenching resistor is connected to a first electrode,
• the second electrode region is connected to a second electrode,
• the first electrode and the second electrode are both located on a front side of the silicon substrate, and photons enter the photosensitive layer from a front side of the first electrode region to achieve photo sensing.