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US 12,701,783 B2Granted
Semiconductor device with semiconductor components
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTa-Chun Lin
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided. The semiconductor includes a plurality of semiconductor components and at least two dielectric walls disposed among the semiconductor components. Two of the dielectric walls, which are adjacent, extended along one direction or disposed at two sides of a device isolation, have varied wall widths or offset.
Claims20
A semiconductor device, comprising:
- a plurality of semiconductor components;
- and
- at least two dielectric walls disposed among the semiconductor components, wherein two of the dielectric walls, which are adjacent, have varied wall widths or are offset;
- wherein two of the dielectric walls, which are adjacent, have varied wall heights, and there is an inverse relationship between a plurality of active region widths of the semiconductor components and the wall widths.
1 more element
A semiconductor device, comprising:
- a plurality of semiconductor components;
- and
- at least two dielectric walls disposed among the semiconductor components, wherein two of the dielectric walls, which are extended along one direction, have varied wall widths or are offset;
- wherein two of the dielectric walls, which are extended along one direction, have varied wall heights, and there is an inverse relationship between a plurality of active region widths of the semiconductor components and the wall widths.
1 more element
A semiconductor device, comprising:
- a plurality of semiconductor components;
- at least one device isolation, disposed between two of the semiconductor components;
- and
- at least two dielectric walls disposed among the semiconductor components, wherein two of the dielectric walls, which are disposed at two sides of the device isolation, have varied wall widths or are offset;
- wherein two of the dielectric walls, which are disposed at two sides of the device isolation, have varied wall heights, and there is an inverse relationship between a plurality of active region widths of the semiconductor components and the wall widths.
2 more elements
Dependencies are inferred from the claim text.