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US 12,701,768 B2Granted
Semiconductor device including extended backside contact structure
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung Min Song, Panjae Park, Kang-ill Seo
Life of this patent
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Abstract
Provided is a semiconductor device which includes: a backside contact plug, formed at a back side of the semiconductor device, below a source/drain region connected to the backside contact plug, wherein the backside contact plug includes a 1st portion which is not vertically overlapped by the circuit element.
Claims20
A semiconductor device comprising:
- a first source/drain region;
- a first backside contact plug, at a back side of the semiconductor device, below the first source/drain region connected to the first backside contact plug;
- and
- a shallow trench isolation (STI) structure extending around the first backside contact plug,
- wherein the first backside contact plug comprises a first portion that is free of overlap with the first source/drain region in a first direction that is perpendicular to an upper surface of the STI structure,
- wherein an uppermost surface of the STI structure is coplanar with an uppermost surface of the first backside contact plug,
- wherein a lowermost surface of the STI structure is coplanar with a lowermost surface of the first backside contact plug, and
- wherein the STI structure is free of interface therein.
5 more elements
A semiconductor device comprising:
- a source/drain region;
- a backside contact plug, at a back side of the semiconductor device, below the source/drain region connected to the backside contact plug, wherein the backside contact plug comprises an extended portion that is free of overlap with the source/drain region in a first direction;
- backside metal lines at the back side of the semiconductor device;
- and
- a shallow trench isolation (STI) structure extending around the backside contact plug,
- wherein at least one of the backside metal lines is connected to the backside contact plug,
- wherein the backside metal lines are arranged in a second direction and extend in a third direction,
- wherein the backside metal lines overlap the backside contact plug in the first direction in a cross-section view in the second direction,
- wherein the second direction intersects the third direction,
- wherein the second direction and the third direction are parallel with an upper surface of the STI structure,
- wherein the first direction is perpendicular to the upper surface of the STI structure,
- wherein an uppermost surface of the backside contact plug is coplanar with an uppermost surface of the STI structure,
- wherein a lowermost surface of the backside contact plug is coplanar with a lowermost surface of the STI structure, and
- wherein the STI structure is a monolithic structure.
11 more elements
A method of manufacturing a semiconductor device, the method comprising:
- providing a transistor structure comprising a channel stack on a substrate;
- forming a dummy pattern at a side surface the substrate such that the dummy pattern is free of overlap with the channel stack;
- forming a first recess, in the substrate, below a space where a source/drain region is to be formed;
- forming a source/drain region on the channel stack in the space above the first recess;
- opening the first recess from a bottom thereof and removing the dummy pattern to form a second recess;
- and
- filling the second recess with a backside contact plug connected to the source/drain region such that the backside contact plug comprises an extended portion, corresponding to the dummy pattern,
- wherein the extended portion is free of overlap with the source/drain region in a first direction that is perpendicular to an upper surface of the substrate.
5 more elements
Dependencies are inferred from the claim text.