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US 12,701,698 B2Granted
3D memory device, measurement method thereof, and film measurement device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsFengrui Li, Shuo Zhang, Yuanxiang Zou, Wei Zhang, Yi Zhou
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Abstract
A three-dimensional (3D) memory device includes a stack structure including a first stack structure and a second stack structure over the first stack structure, and a barrier layer disposed in a first channel hole in the first stack structure.
Claims15
A three-dimensional (3D) memory device, comprising:
- a substrate;
- a stack structure disposed over the substrate and comprising a first stack structure and a second stack structure over the first stack structure;
- and
- a barrier layer disposed in each of first channel holes of the first stack structure, wherein:
- the barrier layer is configured to block a signal within a wavelength range from entering the first stack structure, and a thickness of the second stack structure corresponds to a reflected portion of the signal that is reflected from the second stack structure;
- and
- an incident angle of the signal is determined by a spacing between two adjacent barrier layers.
4 more elements
Dependencies are inferred from the claim text.