Semiconductor digital photomultiplier photon counter and imager and related technology

A digital breakdown-avalanche photon sensor, comprising:

• a breakdown-avalanche photon sensor comprising:
• a guard ring;
• a lower layer and an upper layer within the epitaxial layer, which form a sensitive breakdown-avalanche pn-junction, wherein the guard ring is located within the epitaxial layer;
• wherein the guard ring is configured for suppression of a breakdown-avalanche process at edges of the breakdown-avalanche photon sensor due to a weaker electric field near a guard ring area compared to an electric field within a central region of the pn-junction;
• and
• a quenching element, which is electrically connected to an upper area of the pn-junction of the breakdown-avalanche photon sensor, wherein the quenching element is configured for quenching the breakdown-avalanche photon sensor after detection of a photon;
• and
• a digital memory, wherein the memory is electrically connected to the breakdown-avalanche photon sensor, and
• wherein, upon photo detection by the breakdown-avalanche photon sensor, the breakdown-avalanche photon sensor is configured to generate a signal and send the signal to the digital memory, and
• wherein the digital memory is configured to store the signal as data information.

A digital breakdown-avalanche photon sensors array, comprising:

• at least a one-dimensional array of digital breakdown avalanche photon sensors comprising:
• a breakdown-avalanche photon sensor, wherein the breakdown-avalanche photon sensor comprises:
• a guard ring;
• a lower layer and an upper layer within the epitaxial layer, which form a sensitive breakdown-avalanche pn-junction, wherein the guard ring is located within the epitaxial layer;
• wherein the guard ring is configured for suppression of a breakdown-avalanche process at edges of the breakdown-avalanche photon sensor due to a weaker electric field near a guard ring area compared to an electric field within a central region of the pn-junction;
• and
• a quenching element, which is electrically connected to an area of the pn-junction of the breakdown-avalanche photon sensor, wherein the quenching element is configured for quenching the breakdown-avalanche photon sensor after detection of a photon;
• and
• a digital memory, wherein the memory is electrically connected to the breakdown-avalanche photon sensor, and
• wherein, upon photo detection by the breakdown-avalanche photon sensor, the breakdown-avalanche photon sensor is configured to generate a signal and send the signal to the digital memory,
• wherein the digital memory is configured to store the signal as data information;
• and
• wherein processing electronics of the digital breakdown avalanche photon sensors array are electrically connected with each other.