Solid-state imaging element, imaging device, and method for controlling solid-state imaging element

An imaging device, comprising:

• a comparison unit configured to:
• compare a signal level with a threshold, wherein the signal level corresponds to an exposure amount associated with an exposure of a pixel of the imaging device;
• and
• output a comparison result based on the comparison of the signal level with the threshold;
• a pre-stage circuit configured to:
• select a conversion efficiency from a plurality of conversion efficiencies based on the comparison result;
• convert charges into a first voltage at the selected conversion efficiency;
• and
• output the first voltage based on the conversion;
• a capacitor unit configured to hold the first voltage, wherein the capacitor unit includes a first capacitor element and a second capacitor element;
• a selection circuit configured to sequentially execute control to:
• connect one of the first capacitor element or the second capacitor element to a post-stage node;
• disconnect each of the first capacitor element and the second capacitor element from the post-stage node;
• and
• connect other of the one of the first capacitor element or the second capacitor element to the post-stage node;
• a post-stage reset transistor configured to initialize a level of the post-stage node based on the disconnection of each of the first capacitor element and the second capacitor element from the post-stage node;
• a post-stage circuit configured to:
• read the held first voltage via the post-stage node;
• and
• output a second voltage to a vertical signal line based on the read of the first voltage, wherein the second voltage is output as a pixel signal;
• and
• a signal processing circuit configured to execute a signal processing operation on the pixel signal.

A method for controlling a solid-state imaging element, the method comprising:

• controlling a comparison unit to:
• compare a signal level with a threshold, wherein the signal level corresponds to an exposure amount associated with an exposure of a pixel of the solid-state imaging element;
• and
• output a comparison result based on the comparison of the signal level with the threshold;
• controlling a pre-stage circuit to:
• select a conversion efficiency from a plurality of conversion efficiencies based on the comparison result;
• convert charges into a first voltage at the selected conversion efficiency;
• and
• output the first voltage based on the conversion;
• controlling a capacitor unit to hold the first voltage, wherein the capacitor unit includes a first capacitor element and a second capacitor element;
• controlling a selection circuit to sequentially execute control to:
• connect one of the first capacitor element or the second capacitor element to a post-stage node;
• disconnect each of the first capacitor element and the second capacitor element from the post-stage node;
• and
• connect other of the one of the first capacitor element or the second capacitor element to the post-stage node;
• controlling a post-stage reset transistor to initialize a level of the post-stage node based on the disconnection of the each of the first capacitor element and the second capacitor element from the post-stage node;
• and
• controlling a post-stage circuit to:
• read the held first voltage via the post-stage node;
• and
• output a second voltage to a vertical signal line based on the read of the first voltage.