Acoustic wave device
AssigneeMurata Manufacturing Co., Ltd.
InventorsKazunori Inoue, Shintaro Kubo
Life of this patent
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Abstract
An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode on a first main surface of the piezoelectric layer, wherein the support includes an air gap portion opened on a piezoelectric layer side, the support includes an inner side wall facing the air gap portion, and a high thermal conductive film is directly or indirectly laminated on at least a portion of a second main surface of the piezoelectric layer and extends to the inner side wall of the support.
Claims21
An acoustic wave device comprising:
- a support including a support substrate;
- a piezoelectric layer on the support and including first and second main surfaces opposed to each other;
- and
- an IDT electrode on the first main surface of the piezoelectric layer and including a plurality of electrode fingers;
- wherein
- the support includes an air gap portion open on a piezoelectric layer side, and the air gap portion overlaps at least a portion of the IDT electrode in a thickness direction of the support;
- the support includes an inner side wall facing the air gap portion;
- and
- a high thermal conductive film is provided that is directly or indirectly laminated on at least a portion of the second main surface of the piezoelectric layer, extends to the inner side wall of the support, and has higher thermal conductivity than the piezoelectric layer.
A method for producing an acoustic wave device, the method comprising:
- preparing a structure including a support including a support substrate, a piezoelectric layer on the support and including first and second main surfaces opposed to each other, and an IDT electrode on the first main surface of the piezoelectric layer and including a plurality of electrode fingers, the support including an air gap portion opened on a piezoelectric layer side, the air gap portion overlapping at least a portion of the IDT electrode in a thickness direction of the support, and the support including an inner side wall facing the air gap portion;
- and
- forming, in the air gap portion of the structure, a high thermal conductive film extending from the second main surface of the piezoelectric layer to the inner side wall of the support and being made of a material having higher thermal conductivity than the piezoelectric layer.
Dependencies are inferred from the claim text.