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US 12,700,653 B2Granted
Stacked double junction circulator device and methods for fabrication
AssigneeTTM Technologies, Inc.
InventorsThomas Lingel, Tyler McGrath, Matthew William Edlich
Life of this patent
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Abstract
The disclosure provides designs and methods of fabrication of stacked double junction circulator device that includes two or more ferrite elements. The disclosed stacked double junction circulator device uses a single magnet, instead of two magnets that are conventionally used for the side-by-side double junction circulator. The disclosed stacked double junction circulator device offers significant advantages in regards to installation requirements on the customer side.
Claims26
A device comprising:
- a bottom ground plane;
- a first dielectric layer disposed over the bottom ground plane the first dielectric layer
- comprising a first junction circuit disposed on a top side of the first dielectric layer opposite from the bottom ground plane;
- a second dielectric layer disposed over the first dielectric layer, the second dielectric layer having a first opening that embeds a first ferrite element;
- a third dielectric layer disposed over the second dielectric layer;
- a fourth dielectric layer disposed over the third dielectric layer, the fourth dielectric layer having a second opening that embeds a second ferrite element aligned with the first ferrite element;
- a fifth dielectric layer disposed over the fourth dielectric layer, wherein-the fifth dielectric layer comprising a second junction circuit on a bottom side adjacent to the fourth dielectric layer.
4 more elements
A method for fabricating a device, the method comprising:
- disposing a first dielectric layer over a bottom ground plane, the first dielectric layer comprising a first junction circuit over a top side of the first dielectric layer opposite from the bottom ground plane;
- disposing a second dielectric layer over the first dielectric layer;
- embedding a first ferrite element in a first opening of the second dielectric layer;
- disposing a third dielectric layer over the second dielectric layer:
- disposing a fourth dielectric layer over the third dielectric layer:
- embedding a second ferrite element in a second opening of the fourth dielectric layer;
- aligning the first ferrite element with the second ferrite element;
- disposing a fifth dielectric layer disposed over the fourth dielectric layer, the fifth dielectric layer comprising a second junction circuit over a bottom side adjacent to the fourth dielectric layer:
- aligning a first central junction of the first junction circuit with a second central junction of the second junction circuit;
- and
- forming a stack including the first, second, third, fourth, and fifth dielectric layers, the bottom ground plane, the first junction circuit, the second junction circuit, the first ferrite element, and the second ferrite element.
8 more elements
Dependencies are inferred from the claim text.