Secure anti-fuse one time programmable bit cell design

A one-time programmable (OTP) bit cell, comprising:

• a first substrate layer comprising an insulating layer comprising a buried oxide (BOX) layer or a shallow trench isolation (STI) structure;
• an insulating layer disposed over the first substrate layer;
• a gate structure disposed over the insulating layer and comprising a P+region adjacent to the insulating layer;
• a first contact electrically coupled to the gate structure;
• and
• a second contact coupled to the first substrate layer and in direct contact with the insulating layer.

A method of fabricating a one-time programmable (OTP) bit cell, the method comprising:

• providing a P− well comprising an N+ region and a P+ region above an insulating layer comprising a buried oxide (BOX) layer or a shallow trench isolation (STI) structure;
• providing a first contact electrically coupled to the N+ region of the P− well;
• providing a second contact electrically coupled to the P+ region of the P− well;
• providing an insulating layer disposed over a portion of the N+ region, a portion of the P− well, and a portion of the P+ region;
• providing a gate structure disposed over the insulating layer and comprising a P+ region adjacent to the insulating layer and opposite the insulating layer from at least a portion of the N+ region of the P− well;
• and
• providing a third contact electrically coupled to the gate structure.

A method of fabricating a one-time programmable (OTP) bit cell, the method comprising:

• providing a first substrate layer comprising an insulating layer comprising a buried oxide (BOX) layer or a shallow trench isolation (STI) structure;
• providing an insulating layer disposed over the first substrate layer;
• providing a gate structure disposed over the insulating layer and comprising a P+ region adjacent to the insulating layer;
• providing a first contact electrically coupled to the gate structure;
• and
• providing a second contact coupled to the first substrate layer and in direct contact with the insulating layer.