Method for depositing a cover layer, EUV lithography system and optical element
AssigneeCarl Zeiss SMT GmbH
InventorsDirk Ehm, Moritz Becker, Stefan Schmidt
Life of this patent
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Abstract
A method of depositing a cover layer onto an optical element (M1) for reflection of EUV radiation. In the method, a cover layer containing phosphorus (P) is deposited onto the optical element (M1). The optical element (M1) in the course of deposition of the cover layer (35) is disposed in an interior (39) of a housing (36) of an EUV lithography system, and, for the deposition of the cover layer, phosphorus (P) is released from at least one phosphorus source (42, 43) disposed outside the interior (39) or within the interior (39). Also disclosed are an EUV lithography system and an optical element (M1) for reflecting EUV radiation.
Claims21
A method, comprising:
- depositing a cover layer containing phosphorus onto an optical element;
- wherein, in the course of said depositing of the cover layer, the optical element is disposed in an interior of a housing of an extreme ultraviolet (EUV) lithography system;
- and
- for said depositing of the cover layer, releasing phosphorus from at least one phosphorus source disposed outside the interior or within the interior, wherein the cover layer is deposited onto a protective layer of the optical element.
A method, comprising:
- depositing a cover layer containing phosphorus onto an optical element;
- wherein, in the course of said depositing of the cover layer, the optical element is disposed in an interior of a housing of an extreme ultraviolet (EUV) lithography system;
- and
- for said depositing of the cover layer, releasing phosphorus from at least one phosphorus source disposed outside the interior or within the interior,
- wherein said depositing of the cover layer comprises feeding at least one gas containing phosphorus to the interior via at least one gas inlet, and
- wherein said feeding of the gas containing phosphorus comprises admixing the gas with at least one purge gas.
A method, comprising:
- depositing a cover layer containing phosphorus onto an optical element;
- wherein, in the course of said depositing of the cover layer, the optical element is disposed in an interior of a housing of an extreme ultraviolet (EUV) lithography system;
- and
- for said depositing of the cover layer, releasing phosphorus from at least one phosphorus source disposed outside the interior or within the interior,
- wherein said releasing of the phosphorus comprises exposing a source of the phosphorus to a hydrogen plasma which is generated in operation of the EUV lithography system.
A method, comprising:
- removing a carbon contamination layer from a surface of an optical element;
- subsequent to the removing, depositing a cover layer containing phosphorus onto the optical element;
- wherein, in the course of said depositing of the cover layer, the optical element is disposed in an interior of a housing of an extreme ultraviolet (EUV) lithography system;
- and
- for said depositing of the cover layer, releasing phosphorus from at least one phosphorus source disposed outside the interior or within the interior.
Dependencies are inferred from the claim text.